| PART |
Description |
Maker |
| H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
| IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW25N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| 5SHX19L6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IXRH50N120 IXRH50N100 |
1200V IGBT with reverse blocking capability
1000V IGBT with reverse blocking capability
|
IXYS[IXYS Corporation]
|
| IXRA15N120 |
IGBT with Reverse Blocking capability
|
IXYS
|
| U2102BNBSP U2102B |
IGBT/FET control timer for advanced dimmer, motion sensor, reverse phase control applications
From old datasheet system
|
Atmel Corp
|
